Bi-Directional-Coaxial LD Module

Storage temperature

T_st

-40

+100

°C

-

Operating temperature

T_op

-40

+85

°C

-

Reverse voltage

V_R

2

V

CW

Soldering temperature/time

260/10

°C /S

-

Center wavelength

λc

1290

1310

1330

nm

-

Threshold current

Ith

-

5

15

mA

1310nm,25°C

Spectral width

Δλ

-

1

2

nm

CW，Ith+20mA

Output power

P

-

1

-

mW

CW，Ith+20mA,1310nm

Operating voltage

Vop

-

1.1

1.5

V

CW，Ith+20mA

Rise/ Fall time

Tr/Tf

-

0.3

0.7

nS

CW，Ith+20mA

Monitor current

Im

0.1

0.7

-

mA

CW，Ith+20mA

Detection range

λ

1100

-

1650

nm

-

Dark current

I_d

-

1

5

nA

V_R=5V，25°C

Quantum efficiency

R

0.5

-

-

A/W

V_R=5V，λ=1310 nm

Saturation power

P

10

-

-

dBm

V_R=5V，25°C

Rise and Fall time

T_r/T_f

-

0.1

-

ns

R_L=50Ω

Reverse Voltage

V_R

-

-

15

V

-

Capacitance

C_t

-

-

0.75

pF

V_R=5V

Center wavelength

λc

1520

1550

1580

nm

-

Threshold current

Ith

-

10

20

mA

CW,25℃

Spectral width

Δλ

-

1

2

nm

CW,Ith+20mA

Output power

P

-

1

-

mW

CW,Ith+20mA

Operating voltage

Vop

-

1.1

1.5

V

CW,Ith+20mA

Rise/ Fall time

Tr/Tf

-

0.3

0.7

nS

CW,Ith+20mA

Monitor current

Im

0.1

0.4

-

mA

CW,Ith+20mA

Detection range

λ

1100

-

1650

nm

-

Dark current

I_d

-

1

5

nA

V_R=5V，25°C

Quantum efficiency

R

0.45

-

-

A/W

V_R=5V，λ=1310 nm

Saturation power

P

10

-

-

dBm

V_R=5V，25°C

Rise and Fall time

T_r/T_f

-

0.1

-

ns

R_L=50Ω

Reverse Voltage

V_R

-

-

15

V

-

Capacitance

C_t

-

-

0.75

pF

V_R=5V

1(case)

ground

2

PD(+)

3

PD(-)